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EMB70N08CS 데이터시트(PDF) 1 Page - Excelliance MOS Corp. |
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EMB70N08CS 데이터시트(HTML) 1 Page - Excelliance MOS Corp. |
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1 / 5 page ![]() 2012/7/18 p.1 EMB70N08CS G D S N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 80V RDSON (MAX.) 65mΩ ID 15A UIS, 100% Tested Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT Gate‐Source Voltage VGS ±20 V Continuous Drain Current TC = 25 °C ID 15 A TC = 100 °C 10 Pulsed Drain Current 1 IDM 60 Avalanche Current IAS 23 Avalanche Energy L = 0.1mH, ID=23A, RG=25Ω EAS 27 mJ Repetitive Avalanche Energy 2 L = 0.05mH EAR 13 Power Dissipation TC = 25 °C PD 39 W TC = 100 °C 15 Operating Junction & Storage Temperature Range Tj, Tstg ‐55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNIT Junction‐to‐Case RJC 3.2 °C / W Junction‐to‐Ambient 3 RJA 50 1Pulse width limited by maximum junction temperature. 2Duty cycle 1% |
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