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WNMD2168-8/TR 데이터시트(PDF) 2 Page - Will Semiconductor Ltd.

부품명 WNMD2168-8/TR
상세설명  Dual N-Channel, 20V, 4.1A, Power MOSFET
PDF  7 Pages
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제조업체  WILLSEMI [Will Semiconductor Ltd.]
홈페이지  http://www.willsemi.com/index.php?siteid=2
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WNMD2168-8/TR 데이터시트(HTML) 2 Page - Will Semiconductor Ltd.

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WNMD2168
Absolute Maximum ratings
Thermal resistance ratings
a
Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper
b
Surface mounted on FR-4 board using minimum pad size, 1oz copper
c
Pulse width<380µs, Duty Cycle<2%
d
Maximum junction temperature TJ=150°C.
Parameter
Symbol
10 S
Steady State
Unit
Drain-Source Voltage
VDS
+20
V
Gate-Source Voltage
VGS
±10
Continuous Drain Current
a
TA=25°C
ID
5.1
4.1
A
TA=70°C
3.8
3.5
Maximum Power Dissipation
a
TA=25°C
PD
1.1
0.9
W
TA=70°C
0.7
0.6
Continuous Drain Current
b
TA=25°C
ID
4.1
3.6
A
TA=70°C
3.5
3.0
Maximum Power Dissipation
b
TA=25°C
PD
0.9
0.7
W
TA=70°C
0.55
0.45
Pulsed Drain Current
c
IDM
25
A
Operating Junction Temperature
TJ
-55~+150
°C
Lead Temperature
TL
260
°C
Storage Temperature Range
Tstg
-55~+150
°C
Parameter
Symbol
Typical
Maximum
Unit
Junction-to-Ambient Thermal Resistance
a
t ≤ 10 s
RθJA
87
110
°C/W
Steady State
113
129
Junction-to-Ambient Thermal Resistance
b
t ≤ 10 s
RθJA
102
132
Steady State
136
161
Junction-to-Case Thermal Resistance
Steady State
RθJC
61
75
Will Semiconductor Ltd.
2
Jan, 2015 - Rev.1.1



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