EMB90P06CS datasheet(1/5 Pages) EXCELLIANCE

부품명	EMB90P06CS

상세설명	P?륝hannel Logic Level Enhancement Mode Field Effect Transistor

PDF	5 Pages

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제조업체	EXCELLIANCE [Excelliance MOS Corp.]

홈페이지	http://www.excelliancemos.com/

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2015/4/24

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EMB90P06CS

G

S

D

P‐Channel Logic Level Enhancement Mode Field Effect Transistor

Product Summary:

BVDSS ‐60V

RDSON (MAX.)

90mΩ

ID ‐10A

UIS, Rg 100% Tested

Pb‐Free Lead Plating & Halogen Free

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

UNIT

Gate‐Source Voltage

VGS

±20

V

Continuous Drain Current

TC = 25 °C

ID

‐10

A

TC = 100 °C ‐7

Pulsed Drain Current

1

IDM ‐40

Avalanche Current

IAS ‐10

Avalanche Energy

L = 0.1mH, ID=‐10A, RG=25Ω

EAS

5

mJ

Repetitive Avalanche Energy

2

L = 0.05mH

EAR

2

Power Dissipation

TC = 25 °C

PD

27

W

TC = 100 °C

11

Operating Junction & Storage Temperature Range

Tj, Tstg ‐55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

UNIT

Junction‐to‐Case

RJC

4.5

°C / W

Junction‐to‐Ambient

RJA

85

1Pulse width limited by maximum junction temperature.

2Duty cycle  1％

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Excelliance MOS Corp.	EMB90P06A	198Kb / 6P	P?륝hannel Logic Level Enhancement Mode Field Effect Transistor
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