| 전자부품 데이터시트 검색엔진 |
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EMBA5P06P 데이터시트(PDF) 4 Page - Excelliance MOS Corp. |
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EMBA5P06P 데이터시트(HTML) 4 Page - Excelliance MOS Corp. |
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4 / 5 page ![]() 2016/11/24 p.4 EMBA5P06P DS V = ‐ 5V Q ‐ Gate Charge( nC ) 0 0 2 4 g 36 I = ‐ 2A 6 8 10 D 12 9 15 ‐ 15V ‐ 10V Gate Charge Characteristics ‐ V , Drain‐Source Voltage( V ) Capacitance Characteristics 600 0 0 200 400 Crss DS 10 Coss 800 1000 1200 20 30 40 Ciss 50 60 V = 0V GS f = 1MHZ DC ‐V ‐ Drain‐Source Voltage( V ) Maximum Safe Operating Area V = ‐10V Single Pulse R = 85°C/W T = 25°C 0.1 0.01 0.1 DS 1 JA A GS R Li mi t 1 10 100 DS (O N) 10s 10 100 100μs 10ms 100ms 1s 1ms 20 0 10 30 40 50 Single Pulse R = 85°C/W T = 25°C A θJA t ,Time ( sec ) 0.001 0.01 0.1 1 100 10 1 1000 Single Pulse Maximum Power Dissipation ‐1 t ,Time (sec) Transient Thermal Response Curve 10 0.001 ‐4 0.01 0.02 10 ‐3 10 ‐2 10 Single Pulse 0.01 Duty Cycle = 0.5 0.1 0.1 0.05 0.2 1 P θ JA 4.R (t)=r(t) * R 3.T ‐ T = P * R (t) θ JA 2.R =85°C/W 1.Duty Cycle,D = DM 1 110 J 1000 100 t1 t2 θ JA θ JA A t2 t1 Notes: |
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