2SC3380 datasheet(1/3 Pages) KEXIN

부품명	2SC3380

상세설명	NPN Transistors

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제조업체	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

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Transistors

NPN Transistors

2SC3380

■

Features

●

Collector Current Capability IC=100mA

●

Collector Emitter Voltage VCEO=300V

1.Base

2.Collector

3.Emitter

1.70 0.1

0.42 0.1

0.46 0.1

SOT-89

Unit:mm

■

Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

VCBO

300

Collector - Emitter Voltage

VCEO

300

Emitter - Base Voltage

VEBO

5

Collector Current - Continuous

IC

100

mA

Collector Power Dissipation

PC

1

W

Junction Temperature

TJ

150

Storage Temperature Range

Tstg

-55 to 150

V

℃

■

Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

VCBO

Ic= 100 μA， IE= 0

300

Collector- emitter breakdown voltage

VCEO

Ic= 1 mA， RBE= ∞

300

Emitter - base breakdown voltage

VEBO

IE= 100μA， IC= 0

5

Collector-base cut-off current

ICBO

VCB= 300 V , IE= 0

0.1

Collector cut-off current

ICEO

VCE = 250 V, RBE = ∞

1

Emitter cut-off current

IEBO

VEB= 5V , IC=0

0.1

Collector-emitter saturation voltage

VCE(sat) IC=20 mA, IB=2mA

1.5

Base - emitter saturation voltage

VBE(sat) IC=20 mA, IB=2mA

1.2

DC current gain

hFE

VCE= 20V, IC= 20mA

30

200

Collector output capacitance

Cob

VCB= 20V, IE= 0,f=1MHz

4

pF

Transition frequency

fT

VCE= 20V, IC= 20mA

80

MHz

V

uA

V

■

Marking

AS

유사한 부품 번호 - 2SC3380

제조업체	부품명	데이터시트	상세설명
Hitachi Semiconductor	2SC3380	29Kb / 6P	Silicon NPN Triple Diffused
Renesas Technology Corp	2SC3380	62Kb / 6P	Silicon NPN Triple Diffused
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	2SC3380	82Kb / 8P	Silicon NPN Triple Diffused

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2SC3380 데이터시트(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

2SC3380 데이터시트(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

유사한 부품 번호 - 2SC3380

유사한 설명 - 2SC3380

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