GTVA212701FA-V2-R2 datasheet(1/8 Pages) CREE

부품명	GTVA212701FA-V2-R2

상세설명	Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2110 ??2200 MHz

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제조업체	CREE [Cree, Inc]

홈페이지	http://www.cree.com/

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4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com

Rev. 04.1, 2019-01-28

All published data at TCASE = 25°C unless otherwise indicated

ESD: Electrostatic discharge sensitive device—observe handling precautions!

GTVA212701FA

Package H-87265J-2

Thermally-Enhanced High Power RF GaN on SiC HEMT

270 W, 48 V, 2110 – 2200 MHz

Features

• GaN on SiC HEMT technology

• Input matched

• Typical pulsed CW performance (class AB), 2180 MHz,

48 V, 10 µs pulse width, 10% duty cycle

- Output power P3dB = 300 W

-Drainefficiency=68.5%

- Gain = 17.5 dB

• Human Body Model Class 1B (per ANSI/ESDA/JEDEC

JS-001)

• Capable of handling 10:1 VSWR @ 48 V, 56.2 W (WCD-

MA) output power

• Low thermal resistance

• Pb-free and RoHS-compliant

Description

The GTVA212701FA is a 270-watt GaN on SiC high electron mobility transis-

tor (HEMT) for use in the 2110 to 2200 MHz frequecy band. It features input

matching, high efficiency, and a thermally-enhanced earless package.

RF Characteristics

Single-carrier WCDMA Specifications (tested in Wolfspeed test fixture)

VDD = 48 V, IDQ = 320 mA, 56.2 W average output power, ƒ = 2180 MHz. 3GPP WCDMA signal: 3.84 MHz channel bandwidth, 10 dB PAR at

0.01% CCDF.

Characteristic

Symbol

Min

Typ

Max

Unit

Gain

Gps

18

19

—

dB

DrainEfficiency

hD

35

38

—

%

Adjacent Channel Power Ratio

ACPR

—

–29

–26

dBc

Output PAR at 0.01% probablity on CCDF

OPAR

6.4

7.0

—

dB

-60

-40

-20

0

20

40

60

0

4

8

12

16

20

24

25

30

35

40

45

50

55

Average Output Power (dBm)

Single-carrier WCDMA Drive-up

VDD = 48 V, IDQ = 320 mA, ƒ = 2170 MHz

3GPP WCDMA signal,

10 dB PAR, 3.84 MHz bandwidth

Gain

Efficiency

PAR @ 0.01% CCDF

g212701fa-gr1

GTVA212701FA

유사한 부품 번호 - GTVA212701FA-V2-R2

제조업체	부품명	데이터시트	상세설명
WOLFSPEED, INC.	GTVA212701FA-V2-R2	566Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2110 – 2200 MHz Rev. 04.2, 2022-1-27

More results

유사한 설명 - GTVA212701FA-V2-R2

제조업체	부품명	데이터시트	상세설명
Cree, Inc	GTVA263202FC	458Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 340 W, 48 V, 2620 ??2690 MHz
	GTVA261802FC	495Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 48 V, 2620 ??2690 MHz
	GTVA262701FA	489Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 ??2690 MHz
WOLFSPEED, INC.	GTRA214602FC-V1	522Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 490 W, 48 V, 2110 – 2170 MHz Rev. 02.1, 2022-1-27
	GTRA360502M-V1	844Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 50 W, 48 V, 3400 – 3800 MHz Rev. 04, 2023-06-27
	GTVA262701FA_V2	506Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 – 2690 MHz Rev. 04.3, 2022-1-27
	GTRA262802FC	515Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 250 W, 48 V, 2490 – 2690 MHz Rev. 03.3, 2022-1-27
	GTVA212701FA	566Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2110 – 2200 MHz Rev. 04.2, 2022-1-27
	GTVA261802FC	536Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 48 V, 2620 – 2690 MHz Rev. 02.1, 2022-1-27
	GTVA262701FA	506Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 – 2690 MHz Rev. 04.3, 2022-1-27

More results

GTVA212701FA-V2-R2 데이터시트(PDF) 1 Page - Cree, Inc

GTVA212701FA-V2-R2 데이터시트(HTML) 1 Page - Cree, Inc

유사한 부품 번호 - GTVA212701FA-V2-R2

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