PXAE263708NB-V1-R2 datasheet(8/9 Pages) CREE

부품명	PXAE263708NB-V1-R2

상세설명	Thermally-Enhanced High Power RF LDMOS FET 400 W (P3dB), 28 V, 2620 ??2690 MHz

PDF	9 Pages

Scroll/Zoom	100%

제조업체	CREE [Cree, Inc]

홈페이지	http://www.cree.com/

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8 / 9 page

PXAE263708NB

Rev. 02, 2019-04-03

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com

Package Outline Specifications

Package PG-HB2SOF-8-1

Bottom View

Find the latest and most complete information about products and packaging at the Wolfspeed Internet page www.wolfspeed.com/RF

Diagram Notes–unless otherwise specified:

1. Mold/dam bar/metal protrusion of 0.30 mm max per side not included

2. Fillets and radii: all radii are 0.30 mm max unless specifi ed otherwise

3. Interpret dimensions and tolerances per ISO 8015

4. Dimensions are mm

5. Exposed metal surface are tin plated, may not be covered by mold

compound

6. Does not include mold/dam bar/metal protusion.

7. All tolerances ± 0.1 mm unless specifi ed otherwise

8. All metal surfaces pre-plated, except area of cut

9. Lead thickness: 0.25 mm

10. Pins: D1, D2 – drain; G1, G2 – gate; V – VDD; GND – ground, (Source – bottom

metallization)

Top View

Side View

End View

PXAE263708NB-V1-R2 데이터시트(PDF) 8 Page - Cree, Inc