PXFE181507FC-V1-R0 datasheet(7/8 Pages) CREE

부품명	PXFE181507FC-V1-R0

상세설명	Thermally-Enhanced High Power RF LDMOS FET 175 W, 28 V, 1805 ??1880 MHz

PDF	8 Pages

Scroll/Zoom	100%

제조업체	CREE [Cree, Inc]

홈페이지	http://www.cree.com/

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7 / 8 page

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com

Rev. 02, 2018-08-30

PXFE181507FC

Package Outline Specifications

Package H-37248G-4/2

H-37248G-4/2_sl_01_04-17-2013

(16.76

[.660])

9.78

[.385]

2X 15.72

[.619]

1.02

[.040]

20.57

[.810]

SPH 1.57

[.062]

3.76±0.25

[.148±.010]

4X R0.51+0.38

-0.13

[R.020+.015

-.005 ]

4X 3.49±0.20

[.138±.008]

19.81±0.20

[.780±.008]

21.72

[.855]

50°

2X 2.29

[.090]

3.00

[.118]

45° x 0.64

[.025]

Diagram Notes—unless otherwise specified:

1. Interpret dimensions and tolerances per ASME Y14.5M-1994.

2. Primary dimensions are mm. Alternate dimensions are inches.

3. All tolerances ± 0.127 [.005] unless specified otherwise.

4. Pins: D – drain; G – gate; S – source; V – V

DD.

5. Lead thickness: 0.10 + 0.051/-0.025 mm [.004 +0.002/-0.001 inch].

6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch].

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