| 전자부품 데이터시트 검색엔진 |
|
MTP12N20 데이터시트(PDF) 2 Page - ARTSCHIP ELECTRONICS CO.,LMITED. |
|
|
|||||||||||||||||||||||||||||
MTP12N20 데이터시트(HTML) 2 Page - ARTSCHIP ELECTRONICS CO.,LMITED. |
|
2 / 6 page ![]() IRF230-233/IRF630-633 MTP12N18/12N20 N-Channel Power Mosfets 12A, 150-200V www.artschip.com 2 Maximum Ratings Symbol Characteristic Rating IRF220/222 IRF620/622 MTP7N20 Rating MTP7N18 Rating IRF222/223 IRF622/623 Unit VDSS Drain to Source Voltage 1 200 180 150 V VDGR Drain to Gate Voltage1 RGS=20k Ω 200 180 150 V VGS Gate to Source Voltage ±20 ±20 ±20 V TJ,Tstg Operating Junction and Storage Temperature -55 to +150 -55 to +150 -50 to +150 ℃ TL Maximum Lead Temperatures for Soldering Purposes, 1/8” From Case for 5S 275 275 275 ℃ Maximum Thermal Characteristics IRF220-233 IRF630-633 MTP12N18/20 R ӨJC Thermal Resistance Junction to Case 1.67 1.25 ℃ /W PD Total Power Dissipation At Tc=25℃ 75 100 W IDM Pulsed Drain Current 2 40 40 A Electrical Characteristics (Tc=25℃ unless otherwise noted) Symbol Characteristic Min Max Unit Test Conditions Off Characteristics 200 180 V(BR)DSS Drain Source Breakdown Voltage IRF230/232/630/632 MTP12N20 MTP12N18 IRF231/233/631/633 150 V VGS=0V, ID=250µA 250 µA VDS=Rated VDSS, VGS=0V IDSS Zero Gate Voltage Drain Current 1000 µA VDS=0.8 x Rated VDSS, VGS=0V, Tc=125℃ ±100 IGSS Gate-Body Leakage Current IRF230-233 IRF630-633/ MTP12N18/12N20 ±500 nA VGS=±20V, VDS=0V |
|
|
링크 URL |
| ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크 투 데이터시트 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |