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PI49FCT3805CS 데이터시트(PDF) 3 Page - Pericom Semiconductor Corporation |
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PI49FCT3805CS 데이터시트(HTML) 3 Page - Pericom Semiconductor Corporation |
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3 / 9 page ![]() 3 PS7007B 01/13/99 12345678901234567890123456789012123456789012345678901234567890121234567890123456789012345678901212345678901234567890123456789012123456789012 PI49FCT3805/3806 3.3V Fast CMOS Buffer/Clock Driver Storage Temperature ............................................................ –65°C to +150°C Ambient Temperature with Power Applied .............................. –40°C to +85°C Supply Voltage to Ground Potential (Inputs & Vcc Only) ......... –0.5Vto+7.0V Supply Voltage to Ground Potential (Outputs & I/O Only) ....... –0.5Vto+7.0V DC Input Voltage ....................................................................... –0.5Vto+7.0V DC Output Current ................................................................................ 120mA Power Dissipation .................................................................................... 0.5W Note: Stresses greater than those listed under MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other condi- tions above those indicated in the operational sec- tions of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Maximum Ratings (Above which the useful life may be impaired. For user guidelines, not tested.) Notes: 1. For Max. or Min. conditions, use appropriate value specified under Electrical Characteristics for the applicable device type. 2. Typical values are at VCC = 3.3V, +25°C ambient and maximum loading. 3. VOH = VCC – 0.6V at rated current. 4. This parameter is determined by device characterization but is not production tested. 5. Not more than one output should be shorted at one time. Duration of the test should not exceed one second. Operating Range Ambient Temperature = –40°C to +85°C, Vcc = 3.3V ±0.3V l o b m y Sn o it p ir c s e Ds n o it i d n o C t s e T ) 1 ( . n i M. p y T ) 2 ( . x a Ms ti n U V H O t u p t u OH G I He g a tl o vV C C V , V 5 . 1 = N I V = H I r oV L I I H O A m 1 . 0 = I H O A m 8 = V C C 2 . 0 - 4 . 2 ) 3 ( 0 . 3 V V L O e g a tl o v W O L t u p t u OV C C V , V 5 . 1 = N I V = H I r oV L I I L O A m 1 . 0 = I L O A m 6 1 = I L O A m 4 2 = 2 . 0 3 . 0 2 . 0 4 . 0 5 . 0 V H I t u p n IH G I He g a tl o vl e v el H G I H ci g o L d e e t n a r a u Gs n i P t u p n I 0 . 2 5 . 5 V L I e g a tl o v W O L t u p n Il e v el W O L ci g o L d e e t n a r a u Gs n i P t u p n I 5 . 0 8 . 0 I H I t u p n IH G I Ht n e rr u cV C C . x a M =V N I V = C C ) s n i P t u p n I( 1 µA I L I t n e rr u c W O L t u p n IV C C . x a M =V N I t u p n I( D N G = ) s n i P O /I & 1 I H Z O e c n a d e p m i h g i H t n e rr u C t u p t u O V C C x a M = ) s n i P t u p t u O e t a t S - 3 ( V T U O V = C C V T U O D N G = 1 1 I L Z O V K I e g a tl o v e d o i d p m al CV C C I ,. n i M = N I A m 8 1 = 7 . 0 2 . 1 V I H D O H G I H t u p t u Ot n e rr u cV C C V , V 3 . 3 = N I V = H I V r o , L I V T U O V 5 . 1 = ) 4 ( 5 3 0 6 0 1 1 A m I L D O W O L t u p t u Ot n e rr u cV C C V , V 3 . 3 = N I V = H I V r o , L I V T U O V 5 . 1 = ) 4 ( 0 50 90 0 2 I S O t n e rr u c ti u c ri c tr o h S ) 5 ( V C C V ,. x a M = T U O D N G = ) 5 ( 0 6 5 3 1 0 4 2 VH si s e r e ts y H t u p n I 0 5 1 V m DC Electrical Characteristics (Over the Operating Range) |
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