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AW33201CSR 데이터시트(PDF) 5 Page - Shanghai awinic technology co.,ltd

부품명 AW33201CSR
상세설명  Over-Voltage Protection Load Switch
PDF  17 Pages
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제조업체  AWINIC [Shanghai awinic technology co.,ltd]
홈페이지  http://www.awinic.com.cn/index.php
Logo AWINIC - Shanghai awinic technology co.,ltd

AW33201CSR 데이터시트(HTML) 5 Page - Shanghai awinic technology co.,ltd

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AW33201/AW33205/AW33209
Jan 2018 V1.3
www.awinic.com.cn
5
Copyright © 2016 SHANGHAI AWINIC TECHNOLOGY CO., LTD
ABSOLUTE MAXIMUM RATINGS
(NOTE 1)
Symbol
Parameter
Condition
Min.
Max.
Unit
VIN
Input DC voltage
-0.3
32
V
VIN_PUL
Input peak pulse voltage
20
μs pulse width, repeat 100
times
45
V
VOUT
Output voltage
-0.3
See(NOTE 2)
V
IIN
Switch current(NOTE 3)
Continuous current
4.5
A
TA
Ambient temperature
-40
85
°C
TJ
Junction temperature
-40
150
°C
TSTG
Storage temperature
-55
150
°C
TLEAD
Soldering temperature
At leads, 10 seconds
260
°C
NOTE1:
Conditions out of those ranges listed in “absolute maximum ratings” may cause permanent damages to the
device. In spite of the limits above, functional operation conditions of the device should within the ranges listed in
“recommended operating conditions”. Exposure to absolute-maximum-rated conditions for prolonged periods may affect
device reliability.
NOTE2: 29V or VIN+0.3V, whichever is smaller.
NOTE3: Limited by thermal design.
THERMAL INFORMATION
Symbol
Parameter
Condition
Value
Unit
RJA
Thermal
resistance
from
junction to ambient (NOTE 1)
In free air
85
°C/W
NOTE1: Thermal resistance from junction to ambient is highly dependent on PCB layout.
ESD AND LATCP-UP RATINGS
Symbol
Parameter
Condition
Value
Unit
VESD
Human Body Model
All pins, per MIL-STD-883J Method 3015.9
±3
kV
Charged Device Model
All pins, per JEDEC EIA/JESD22-C101F
±2
kV
Machine Model
All pins, per JEDEC EIA/JESD22-A115
±200
V
ILatch-up
Latch-up
All pins, per JEDEC STANDARD NO.78E
SEPTEMBER 2016, I Trigger
±800
mA
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min.
Typ.
Max.
Unit
VIN
Input DC voltage
2.5
30
V
CIN
Input capacitance
0.1
F
COUT
Output load capacitance
1
100
F



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