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GD9FS1G6F2ALG 데이터시트(PDF) 12 Page - GigaDevice Semiconductor (Beijing) Inc.

부품명 GD9FS1G6F2ALG
상세설명  Single level cell technology
PDF  55 Pages
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제조업체  GIGADEVICE [GigaDevice Semiconductor (Beijing) Inc.]
홈페이지  http://www.gigadevice.com/
Logo GIGADEVICE - GigaDevice Semiconductor (Beijing) Inc.

GD9FS1G6F2ALG 데이터시트(HTML) 12 Page - GigaDevice Semiconductor (Beijing) Inc.

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12
5.3.2. Host Requirements
The host shall not erase or program blocks marked as defective by the manufacturer, and any attempt to do so yields
indeterminate results.
Figure of “Flow chart to create initial invalid block table” outlines the flow chart how to create an initial invalid block table. It
should be performed by the host to create the initial bad block table prior to performing any erase or programming
operations on the target. The 1st byte of both main and spare region in non
‐defective blocks are read FFh with ECC
enabled on the controller. A defective block is indicated by the majority of bits being read non
‐FFh in the Defective Block
Marking location of either the first page or last page of the block. The host shall check the Defective Block Marking location
of both the first and last past page of each block to verify the block is valid prior to any erase or program operations on that
block.
NOTE: Over the lifetime use of a NAND device, the Defective Block Marking of defective blocks may encounter read
disturbs that cause bit changes. The initial defect marks by the manufacturer may change value over the lifetime of the
device, and are expected to be read by the host and used to create a bad block table during initial use of the part.
Start
Accessing the 1st block
Check FFh at
1st byte of both main and spare data
of the first page
Check FFh at
1st byte of both main and spare data
of the last page
Last Block
End
Yes
Update a Bad Block table
Yes
No
No
Accessing next block
No
Figure 8: flow chart to create initial invalid block table sequential figures



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