| 전자부품 데이터시트 검색엔진 |
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GD25VQ40CSIG 데이터시트(PDF) 20 Page - GigaDevice Semiconductor (Beijing) Inc. |
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GD25VQ40CSIG 데이터시트(HTML) 20 Page - GigaDevice Semiconductor (Beijing) Inc. |
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20 / 56 page ![]() Uniform Sector Dual and Quad Serial Flash GD25VQ40C 20 Figure 10. Quad Output Fast Read Sequence Diagram 7.10. Dual I/O Fast Read (BBH) The Dual I/O Fast Read command is similar to the Dual Output Fast Read command but with the capability to input the 3-byte address (A23- 0) and a “Continuous Read Mode” byte 2-bit per clock by SI and SO, each bit being latched in during the rising edge of SCLK, then the memory contents are shifted out 2-bit per clock cycle from SI and SO. The command sequence is shown in followed Figure11. The first byte addressed can be at any location. The address is automatically incremented to the next higher address after each byte of data is shifted out. Dual I/O Fast Read with “Continuous Read Mode” The Dual I/O Fast Read command can further reduce command overhead through setting the “Continuous Read Mode” bits (M7-0) after the input 3-byte address (A23- A0). If the “Continuous Read Mode” bits (M7-0) =AXH, then the next Dual I/O Fast Read command (after CS# is raised and then lowered) does not require the BBH command code. The command sequence is shown in followed Figure11 . If the “Continuous Read Mode” bits (M7-0) are any value other than AXH, the next command requires the first BBH command code, thus returning to normal operation. A “Continuous Read Mode” Reset command can be used to reset (M7-0) before issuing normal command. Command 0 1 2 3 4 5 6 7 6BH CS# SCLK SI(IO0) SO(IO1) High-Z 8 9 10 28 29 30 31 3 2 1 0 23 22 21 24-bit address 34 35 36 37 33 1 5 1 5 1 5 1 38 39 Byte1 32 42 43 44 45 41 46 47 40 5 Dummy Clocks 0 4 0 4 0 4 0 4 4 5 WP#(IO2) High-Z HOLD#(IO3) High-Z CS# SCLK SI(IO0) SO(IO1) WP#(IO2) HOLD#(IO3) 2 6 2 6 2 6 2 6 6 3 7 3 7 3 7 3 7 7 Byte2 Byte3 Byte4 |
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