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GD25VE32CSMS 데이터시트(PDF) 46 Page - GigaDevice Semiconductor (Beijing) Inc. |
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GD25VE32CSMS 데이터시트(HTML) 46 Page - GigaDevice Semiconductor (Beijing) Inc. |
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46 / 63 page ![]() Uniform Sector Dual and Quad Serial Flash GD25VE32C 46 8. ELECTRICAL CHARACTERISTICS 8.1. POWER-ON TIMING Figure 40. Power-on Timing Sequence Diagram Table6. Power-Up Timing and Write Inhibit Threshold Symbol Parameter Min. Max. Unit tVSL VCC (min.) to device operation 5 ms VWI Write Inhibit Voltage 1.5 2.1 V VPWD VCC voltage needed to below VPWD for ensuring initialization will occur 0.5 V tPWD The minimum duration for ensuring initialization will occur 300 us 8.2. INITIAL DELIVERY STATE The device is delivered with the memory array erased: all bits are set to 1(each byte contains FFH).The Status Register bits are set to 0, except DRV0 bit (S21) is set to 1. 8.3. ABSOLUTE MAXIMUM RATINGS Parameter Value Unit Ambient Operating Temperature -40 to 85 ℃ Storage Temperature -65 to 150 ℃ Applied Input / Output Voltage -0.6 to VCC+0.4 V Transient Input / Output Voltage (note: overshoot) -2.0 to VCC+2.0 V VCC -0.6 to 4.2 V VCC(max.) VCC(min.) tVSL Chip Selection is not allowed Full Device Access Allowed Time VPWD(max.) tPWD VCC |
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