HM5801 datasheet(13/19 Pages) HMSEMI

13 / 19 page

LDO1 Load Transient Response (ILDO1=0mA to

200mA, VBAT=3.6V,Cldo1_out=1uF)

LDO1 Load Transient Respon se (ILDO1=50mA to 200mA,

VBAT=3.6V,Cldo1_out=1uF)

APPLICATION INFORMATION

Battery Charger

Adjusting Charging Current

The charging current is programmed using 1%

precision resistor from PROG pin to ground. When

USB supply the

HM5801 and AC-IN is low level

voltage, the charging current and the programming

resistor are calculated by the following equations:

RPROG=470V/ICHG,

ICHG=470V/RPROG

When Adapter

alone or both Adapter and USB

supply the

HM5801, or USB alone but AC-IN is

connected to high level voltage, the charging current

and the programming resistor are calculated using the

following equations:

RPROG=750V/ICHG,

ICHG=750V/RPROG

Thermal limiting

An internal thermal feedback loop reduces the

programmed charge current if the die temperature

attempts to rise above a preset value of approximately

120℃. This feature protects the

HM5801 from excessive

temperature and allows the user to push the limits of the

power handling capability of a given circuit board

without risk of damaging the

HM5801.

The conditions that cause the

HM5801 to reduce charge

current through thermal feedback can be approximated

by considering the power dissipated in the IC. Nearly

all of this power dissipation is generated by the internal

MOSFET—this is calculated to be approximately:

PD = (VCHGIN – VBAT) • IBAT

Where PD is the power dissipated

VCHGIN is the input supply voltage

VBAT is the battery voltage

PMU for Portable Applications

HM5801

HM5801 데이터시트(PDF) 13 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

HM5801 데이터시트(HTML) 13 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

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