| 전자부품 데이터시트 검색엔진 |
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08065A 데이터시트(PDF) 2 Page - KIA Semiconductor Technology |
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08065A 데이터시트(HTML) 2 Page - KIA Semiconductor Technology |
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2 / 3 page ![]() 8A,650V Silicon Carbide Diode KIA SEMICONDUCTORS 08065A KIA SEMICONDUCTORS KIA SEMICONDUCTORS 5. Absolute Maximum Ratings (TJ=25ºC unless otherwise noted) Parameter Symbol Rating Units Repetitive Peak Reverse Voltage VRRM 650 V Surge Peak Reverse voltage VRSM 650 V DC Blocking Voltage VDC 650 V Continuous forward current TC = 25ºC TC = 135ºC TC = 150ºC I F 24 11 8 A Repetitive Peak Forward Current I FRM 56 A Surge no repetitive forward current IFSM 72 A Power Dissipation TC = 25ºC TC = 110ºC Ptot 107 46 W Operating Junction and storage temperature TJ,Tstg -55 to +175 ºC 6. Thermal characteristics Parameter Symbol Test Conditions Min Typ Max Units Thermal resistance R th(J -C) - - 2.8 - ºC/W 7. Electrical characteristics Parameter Symbol Conditions Rating Unit Min Typ Max Gate Threshold Voltage VF IF=8A TC=25 °C - 1.4 1.8 V TC=175°C - 2.1 3 Reverse Current IR VR=650V TC=25 °C - 10 60 μA TC=175°C - 48 500 Total Capacitive Charge Qc VR =400V, IF =8A TJ = 25 °C vr QC= ò0 C (V)dv - 25 - nC Total Capacitance C TJ = 25 °C, f = 1MHz VR=0V - 440 - pF VR=200V 54 VR=400V 40 Capacitance Stored Energy EC VR=400V - 5 - μJ 2 of3 Rev 1.0 JULY 2018 |
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