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HM1N60PR 데이터시트(PDF) 2 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

부품명 HM1N60PR
상세설명  SiliconN-Channel Power MOSFET
PDF  10 Pages
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제조업체  HMSEMI [Shenzhen Huazhimei Semiconductor Co., Ltd]
홈페이지  http://www.hmsemi.com/
Logo HMSEMI - Shenzhen Huazhimei Semiconductor Co., Ltd

HM1N60PR 데이터시트(HTML) 2 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

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HM1N60
Electrical Characteristics（Tc= 25℃ unless otherwise specified）：
OFF Characteristics
Rating
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VDSS
Drain to Source Breakdown Voltage
VGS=0V, ID=250µA
600
--
--
V
Δ
BVDSS/ΔTJ
Bvdss Temperature Coefficient
ID=250uA,Reference25℃
--
0.71
--
V/℃
VDS = 600V, VGS= 0V,
Ta = 25℃
--
--
25
IDSS
Drain to Source Leakage Current
VDS =480V, VGS= 0V,
Ta = 125℃
--
--
250
µA
IGSS(F)
Gate to Source Forward Leakage
VGS =+30V
--
--
100
nA
IGSS(R)
Gate to Source Reverse Leakage
VGS =-30V
--
--
-100
nA
ON Characteristics
Rating
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
RDS(ON)
Drain-to-Source On-Resistance
VGS=10V,ID=0.5A
--
9
10.5
Ω
VGS(TH)
Gate Threshold Voltage
VDS = VGS, ID = 250µA
2.0
4.0
V
Pulse width tp≤380µs,δ≤2%
Dynamic Characteristics
Rating
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
gfs
Forward Transconductance
VDS=15V, ID =0.5A
--
0.70
--
S
Ciss
Input Capacitance
--
150
--
Coss
Output Capacitance
--
25
--
Crss
Reverse Transfer Capacitance
VGS = 0V VDS = 25V
f = 1.0MHz
--
4
--
pF
Resistive Switching Characteristics
Rating
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
td(ON)
Turn-on Delay Time
--
23
--
tr
Rise Time
--
27
--
td(OFF)
Turn-Off Delay Time
--
12
--
tf
Fall Time
ID =1.0A
VDD = 300V
VGS = 10V
RG = 25Ω
--
27
--
ns
Qg
Total Gate Charge
--
6.0
Qgs
Gate to Source Charge
--
1.1
Qgd
Gate to Drain (“Miller”)Charge
ID =1.0A
VDD =480V
VGS = 10V
--
3.5
nC
P a ge
2 of 10
Shenzhen H&M Semiconductor Co.Ltd
http：//www.hmsemi.com



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