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BUS50 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BUS50 데이터시트(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor 1 isc website:www.iscsemi.com isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BUS50 DESCRIPTION · Collector–Emitter Sustaining Voltage : VCEO(SUS) = 125V(Min.) · High Switching Speed · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for low voltage ,high speed,power switching in Inductive circuits where fall time is critical.It is particularly suited for battery switch mode application such as switching regulations. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 125 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 70 A IB Base Current 20 A PC Collector Power Dissipation @TC=25℃ 350 W Tj Junction Temperature -65~200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.5 ℃ /W |
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