T25D40AFIPR datasheet(44/74 Pages) HMSEMI

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Figure 7.8b Sector Erase Instruction(QPI Mode)

7.2.4 Block Erase (BE) (D8h) and Half Block Erase (52h)

The Block Erase instruction sets all memory within a specified block (64K-bytes) or half block (32K- bytes)

to the erased state of all 1s (FFh). A Write Enable instruction must be executed before the device will accept

the Block Erase Instruction (Status Register bit WEL must equal 1). The instruction is initiated by driving the

CS# pin low and shifting the instruction code “D8h” or “52h” followed a 24-bit block address (A23-A0). The

Block Erase instruction sequence is shown in Figure 7.9.

The CS# pin must be driven high after the eighth bit of the last byte has been latched. If this is not done

the Block Erase instruction will not be executed. After CS# is driven high, the self-timed Block Erase

instruction will commence for a time duration of tBE (See AC Characteristics). While the Block Erase cycle is in

progress, the Read Status Register instruction may still be accessed for checking the status of the BUSY bit.

The BUSY bit is a 1 during the Block Erase cycle and becomes a 0 when the cycle is finished and the device

is ready to accept other instructions again. After the Block Erase cycle has finished the Write Enable Latch

(WEL) bit in the Status Register is cleared to 0. The Block Erase instruction will not be executed if the

addressed page is protected by the Block Protect (TB, SEC, BP2, BP1, and BP0) bits (see Status Register

Memory Protection table).

Figure 7.9a Block Erase Instruction(SPI Mode)

Figure 7.9b Block Erase Instruction(QPI Mode)

7.2.5 Chip Erase (CE) (C7h or 60h)

HM25Q128A

T25D40AFIPR 데이터시트(PDF) 44 Page - Shenzhen Huazhimei Semiconductor Co., Ltd