IXFP4N60P3 datasheet(1/7 Pages) IXYS

부품명	IXFP4N60P3

상세설명	Power MOSFET

PDF	7 Pages

Scroll/Zoom	100%

제조업체	IXYS [IXYS Corporation]

홈페이지	http://www.ixys.com

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1 / 7 page

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

C to 150C

600

V

DGR

T

J

= 25

C to 150C, R

GS = 1M

600

V

GSS

Continuous

30

V

GSM

Transient

40

V

I

D25

T

C

= 25

C4

A

I

DM

T

C

= 25

C, Pulse Width Limited by T

JM

8A

I

A

T

C

= 25

C2

A

E

AS

T

C

= 25

C

200

mJ

dv/dt

I

S

 I

DM, VDD  VDSS, TJ  150C

35

V/ns

P

D

T

C

= 25

C

114

W

T

J

-55 ... +150

C

T

JM

150

C

T

stg

-55 ... +150

C

T

L

Maximum Lead Temperature for Soldering

300

°C

T

SOLD

Plastic Body for 10s

260

°C

M

d

Mounting Torque (TO-220)

1.13 / 10

Nm/lb.in.

Weight

TO-252

0.35

g

TO-263

2.50

g

TO-220

3.00

g

DS100427C(6/18)

Polar3 TM HiPerFETTM

Power MOSFET

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Rectifier

IXFY4N60P3

IXFA4N60P3

IXFP4N60P3

V

DSS

= 600V

I

D25

= 4A

R

DS(on) 

 2.4



Features



International Standard Packages



Fast Intrinsic Rectifier



Avalanche Rated



Low R

DS(ON) and QG



Low Package Inductance

Advantages



High Power Density



Easy to Mount



Space Savings

Applications



Switch-Mode and Resonant-Mode

Power Supplies



DC-DC Converters



Laser Drivers



AC and DC Motor Drives



Robotics and Servo Controls

Symbol

Test Conditions

Characteristic Values

(T

J = 25C, Unless Otherwise Specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = 1mA

600

V

GS(th)

V

DS = VGS, ID = 250μA

3.0

5.0

V

I

GSS

V

GS = 30V, VDS = 0V

100 nA

I

DSS

V

DS = VDSS, VGS = 0V

10

A

T

J = 125C

100 μA

R

DS(on)

V

GS = 10V, ID = 0.5 • ID25, Note 1

2.4



G = Gate

D

= Drain

S = Source

Tab = Drain

TO-263 (IXFA)

G

S

D (Tab)

TO-252 (IXFY)

G

S

D (Tab)

TO-220 (IXFP)

D (Tab)

S

G

D

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