IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXFT50N60P3

IXFQ50N60P3

IXFH50N60P3

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Note

1. Pulse test, t

 300s, duty cycle, d  2%.

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

32

55

S

C

iss

6300

pF

C

oss

V

630

pF

C

rss

2.5

pF

R

Gi

Gate Input Resistance

1.0



t

d(on)

31

ns

t

r

20

ns

t

d(off)

62

ns

t

f

17

ns

Q

g(on)

94

nC

Q

gs

V

27

nC

Q

gd

23

nC

R

thJC

0.12

C/W

R

thCS

(TO-247 & TO-3P)

0.25

C/W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

I

S

V

50

A

I

SM

Repetitive, Pulse Width Limited by T

JM

200

A

V

SD

I

1.4

V

t

rr

250

ns

I

RM

11

A

Q

RM

1.1

μC

I

V

Resistive Switching Times

V

R

e

P

TO-247 Outline

1

2

3

Terminals: 1 - Gate

2 - Drain

3 - Source

Dim.

Millimeter

Inches

Min.

Max.

Min. Max.

A

4.7

5.3

.185

.209

A

1

2.2

2.54

.087

.102

A

2

2.2

2.6

.059

.098

b

1.0

1.4

.040

.055

b

1

1.65

2.13

.065

.084

b

2

2.87

3.12

.113

.123

C

.4

.8

.016

.031

D

20.80 21.46

.819

.845

E

15.75 16.26

.610

.640

e

5.20

5.72 0.205 0.225

L

19.81 20.32

.780

.800

L1

4.50

.177

P

3.55

3.65

.140

.144

Q

5.89

6.40 0.232 0.252

R

4.32

5.49

.170

.216

S

6.15 BSC

242 BSC

TO-268 Outline

Terminals: 1 - Gate

2,4 - Drain

3 - Source

TO-3P Outline