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LPV7215MF 데이터시트(PDF) 4 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
부품명 LPV7215MF
상세설명  580 nA Rail-to-Rail Input and Output, 1.8V, Push-Pull Output Comparator
PDF  7 Pages
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제조업체  NSC [National Semiconductor (TI)]
홈페이지  http://www.national.com
Logo NSC - National Semiconductor (TI)

LPV7215MF 데이터시트(HTML) 4 Page - National Semiconductor (TI)

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5V Electrical Characteristics (Note 8)
Unless otherwise specified, all limits are guaranteed for T
J = 25˚C, V
+ = 5V, V− = 0V, and V
CM =V
+/2, V
O=V
-.Boldface limits
apply at the temperature extremes.
Symbol
Parameter
Conditions
Min
(Note 5)
Typ
(Note 4)
Max
(Note 5)
Units
I
S
Supply Current
V
CM = 0.3V, TA = 25˚C
612
677
nA
V
CM = 0.3V, −40˚C to 85˚C
740
V
CM = 0.3V, −40˚C to 125˚C
1240
V
CM = 4.7V, TA= 25˚C
825
920
V
CM = 4.7V, −40˚C to 85˚C
970
V
CM = 4.7V, −40˚C to 125˚C
1450
V
OS
Input Offset Voltage
V
CM =0V
±0.3
±3
±4
mV
V
CM =5V
TC V
OS
Input Offset Average Drift
(Note 7)
±1
µV/C
I
B
Input Bias Current (Note 6)
V
CM = 0.5V
−5
fA
V
CM = 4.5V
I
OS
Input Offset Current
1
fA
CMRR
Common Mode Rejection
Ratio
V
CM Stepped from 0V to 3.9V
80
90
dB
V
CM Stepped from 4.4V to 5V
PSRR
Power Supply Rejection Ratio
V
+ = 1.8V to 5V, V
CM =0V
75
93
dB
CMVR
Input Common-Mode Voltage
Range
CMRR
≥ 50 dB
5
0V
V
O
Output Swing High
I
O = 500 µA
4.95
V
I
O =1mA
4.9
Output Swing Low
I
O = −500 µA
50
mV
I
O =−1mA
100
I
OUT
Output Current
Source
15.5
17
mA
Sink
16.7
19
Propagation Delay
(High to Low)
Overdrive = 10 mV
Overdrive = 100 mV
18
8
µs
Propagation Delay
(Low to High)
Overdrive = 10 mV
Overdrive = 100 mV
30
13
µs
t
rise
Rise Time
Overdrive = 10 mV
C
L = 30 pF, RL =1M
Ω
100
ns
Overdrive = 100 mV
C
L = 30 pF, RL =1M
Ω
100
t
fall
Fall Time
Overdrive = 10 mV
C
L = 30 pF, RL =1M
Ω
115
ns
Overdrive = 100 mV
C
L = 30 pF, RL =1M
Ω
95
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test conditions, see the Electrical Characteristics Tables.
Note 2: Human body model, 1.5 k
Ω in series with 100 pF. Machine model: 0Ω in series with 200 pF.
Note 3: The maximum power dissipation is a function of TJ(MAX), θJA, and TA. The maximum allowable power dissipation at any ambient temperature is
PD =(TJ(MAX) -TA)/ θJA . All numbers apply for packages soldered directly onto a PC board at the time of characterization.
Note 4: Typical values represent the most likely parametric norm.
Note 5: Limits are 100% production tested at 25˚C. Limits over the operating temperature range are guaranteed through correlations using statistical quality control
(SQC) method.
Note 6: Positive current corresponds to current flowing into the device.
Note 7: Offset voltage average drift determined by dividing the change in VOS at temperature extremes into the total temperature change.
Note 8: Electrical table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of
the device.
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