CD8550 datasheet(1/3 Pages) ETC1

부품명	CD8550

상세설명	PNP SILICON PLANAR TRANSISTOR

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PNP SILICON PLANAR TRANSISTOR

CD8550

TO-92

CBE

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

SYMBOL

VALUE

UNIT

Collector -Emitter Voltage

VCEO

25

V

Collector -Base Voltage

VCBO

40

V

Emitter Base Voltage

VEBO

6.0

V

Collector Current

IC

2.0

A

Collector Power Dissipation

PC

1.0

W

Operating And Storage Junction

Tj, Tstg

-55 to +125

deg C

Temperature Range

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

SYMBOL

TEST CONDITION

MIN

TYP

MAX

UNIT

Collector -Emitter Voltage

VCEO

IC=10mA, IB=0

25

-

V

Collector -Base Voltage

VCBO

IC=100uA, IE=0

40

-

V

Emitter Base Voltage

VEBO

IE=10uA, IC=0

6.0

-

V

Collector Cut off Current

ICBO

VCB=20V, IE=0

-

500

nA

Emitter Cut off Current

IEBO

VEB=4V, IC=0

-

100

nA

DC Current Gain

hFE

IC=5mA,VCE=1V

45

-

IC=100mA,VCE=1V*

85

-

300

IC=800mA,VCE=1V

40

-

Collector Emitter Saturation Voltage

VCE(Sat)

IC=800mA,IB=80mA

-

0.50

V

Base Emitter Saturation Voltage

VBE(Sat)

IC=800mA,IB=80mA

-

1.2

V

Dynamic Characteristics

Output Capacitance

Cob

VCB=10V,f=1MHz

-

35

pF

Transition Frequency

ft

VCE=10V,IC=100mA,

100

-

MHz

f=100MHz

CLASSIFICATION

B

C

D

hFE*

85-160

120-200

160-300

Continental Device India Limited

Data Sheet

Page 1 of 3

Continental Device India Limited

An ISO/TS16949 and ISO 9001 Certified Company

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