FSB649

SuperSOT

NPN Low Saturation Transistor

These devices are designed with high current gain and low saturation voltage with collector currents up to 3A

continuous. Sourced from Process NC.

Absolute Maximum Ratings*

°C

-55 to +150

Operating and Storage Junction Temperature Range

A

3

Collector Current - Continuous

V

5

Emitter-Base Voltage

V

35

Collector-Base Voltage

V

25

Collector-Emitter Voltage

Units

FSB649

Parameter

Symbol

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150°C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

°C/W

250

Thermal Resistance, Junction to Ambient

mW

500

Total Device Dissipation

FSB649

Units

Max

Characteristic

Symbol

© 1999 Fairchild Semiconductor Corporation

fsb649.lwpPrNC revA

C

E

B