STM32WB55CC datasheet(115/165 Pages) STMICROELECTRONICS

115 / 165 page

DS11929 Rev 3

115/165

STM32WB55xx

Electrical characteristics

152

Figure 21. HSI48 frequency vs. temperature

Low-speed internal (LSI) RC oscillator

NT jitter

Next transition jitter

Accumulated jitter on 28 cycles(4)

±0.15(2)

PT jitter

Paired transition jitter

Accumulated jitter on 56 cycles(4)

±0.25(2)

1. VDD = 3 V, TA = –40 to 125 °C unless otherwise specified.

2. Guaranteed by design.

3. Guaranteed by characterization results.

4. Jitter measurement are performed without clock source activated in parallel.

Table 57. HSI48 oscillator characteristics(1) (continued)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Table 58. LSI1 oscillator characteristics(1)

Symbol

Parameter

Conditions

Min

Typ Max Unit

fLSI

LSI1 frequency

VDD = 3.0 V, TA = 30 °C

31.04

32.96

kHz

VDD = 1.62 to 3.6 V, TA = -40 to 125 °C 29.5

tSU(LSI1)(2) LSI1 oscillator start-up time

130

μs

tSTAB(LSI1)(2) LSI1 oscillator stabilization time 5% of final frequency

125

180

IDD(LSI1)(2)

LSI1 oscillator power

consumption

110

180

1. Guaranteed by characterization results.

2. Guaranteed by design.

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