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KMM372C400CS 데이터시트(PDF) 5 Page - Samsung semiconductor

부품명 KMM372C400CS
상세설명  4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 5V
PDF  19 Pages
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제조업체  SAMSUNG [Samsung semiconductor]
홈페이지  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KMM372C400CS 데이터시트(HTML) 5 Page - Samsung semiconductor

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DRAM MODULE
KMM372C410CK/CS
KMM372C400CK/CS
Test condition : Vih/Vil=2.4/0.8V, Voh/Vol=2.4/0.4V, Output loading CL=100pF
Parameter
Symbol
-5
-6
Unit
Note
Min
Max
Min
Max
CAS precharge to W delay time
tCPWD
53
60
ns
7
RAS to W delay time
tRWD
71
83
ns
7,11
CAS setup time(CAS-before-RAS refresh)
tCSR
10
10
ns
11
CAS hold time(CAS-before-RAS refresh)
tCHR
8
8
ns
11
RAS precharge to CAS hold time
tRPC
3
3
ns
11
Access time from CAS precharge
tCPA
35
40
ns
3,11
Fast page mode cycle time
tPC
35
40
ns
Fast page mode read-modify-write cycle time
tPRWC
75
80
ns
CAS precharge time(Fast page cycle)
tCP
10
10
ns
RAS pulse width (Fast page cycle)
tRASP
50
200K
60
200K
ns
RAS hold time from CAS precharge
tRHCP
35
40
ns
11
W to RAS precharge time (C-B-R refresh)
tWRP
15
15
ns
11
W to RAS hold time (C-B-R refresh)
tWRH
8
8
ns
11
CAS precharge(C-B-R counter test)
tCPT
20
20
ns
OE access time
tOEA
18
20
ns
11
OE to data delay
tOED
18
20
ns
11
Output buffer turn off delay time from OE
tOEZ
5
5
20
ns
11
OE command hold time
tOEH
13
15
ns
PDE to Valid PD bit
tPD
10
10
ns
PDE to PD bit Inactive
tPDOFF
2
7
2
7
ns
Present Detect Read Cycle
AC CHARACTERISTICS (0
°C≤TA≤70°C, VCC=5.0V±10%. See notes 1,2.)



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