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SST49LF080A 데이터시트(PDF) 28 Page - Silicon Storage Technology, Inc

부품명 SST49LF080A
상세설명  8 Mbit LPC Flash
PDF  49 Pages
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제조업체  SST [Silicon Storage Technology, Inc]
홈페이지  http://www.sst.com/
Logo SST - Silicon Storage Technology, Inc

SST49LF080A 데이터시트(HTML) 28 Page - Silicon Storage Technology, Inc

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Data Sheet
8 Mbit LPC Flash
SST49LF080A
©2003 Silicon Storage Technology, Inc.
S71235-00-000
4/03
DC Characteristics
TABLE 12: DC OPERATING CHARACTERISTICS (ALL INTERFACES)
Symbol
Parameter
Limits
Test Conditions
Min
Max
Units
IDD1
1. IDD active while a Read or Write (Program or Erase) operation is in progress.
Active VDD Current
LCLK (LPC mode) and Address Input (PP mode)=VILT/VIHT
at f=33 MHz (LPC mode) or 1/TRC min (PP Mode)
All other inputs=VIL or VIH
Read
12
mA
All outputs = open, VDD=VDD Max
Write
24
mA
See Note2
2. For PP Mode: OE# = WE# =
VIH; For LPC Mode: f = 1/TRC min, LFRAME# = VIH, CE# = VIL.
ISB
Standby VDD Current
(LPC Interface)
100
µA
LCLK (LPC mode) and Address Input (PP mode)=VILT/VIHT
at f=33 MHz (LPC mode) or 1/TRC min (PP Mode)
LFRAME#=0.9 VDD, f=33 MHz, CE#=0.9 VDD,
VDD=VDD Max, All other inputs ≥ 0.9 VDD or ≤0.1 VDD
IRY3
3. The device is in Ready mode when no activity is on the LPC bus.
Ready Mode VDD Current
(LPC Interface)
10
mA
LCLK (LPC mode) and Address Input (PP mode)=VILT/VIHT
at f=33 MHz (LPC mode) or 1/TRC min (PP Mode)
LFRAME#=VIL, f=33 MHz, VDD=VDD Max
All other inputs
≥ 0.9 VDD or ≤0.1 VDD
II
Input Current for Mode
and ID[3:0] pins
200
µA
VIN=GND to VDD, VDD=VDD Max
ILI
Input Leakage Current
1
µA
VIN=GND to VDD, VDD=VDD Max
ILO
Output Leakage Current
1
µA
VOUT=GND to VDD, VDD=VDD Max
VIHI
INIT# Input High Voltage
1.1
VDD+0.5
V
VDD=VDD Max
VILI
INIT# Input Low Voltage
-0.5
0.4
V
VDD=VDD Min
VIL
Input Low Voltage
-0.5
0.3 VDD
VVDD=VDD Min
VIH
Input High Voltage
0.5 VDD
VDD+0.5
V
VDD=VDD Max
VOL
Output Low Voltage
0.1 VDD
VIOL=1500 µA, VDD=VDD Min
VOH
Output High Voltage
0.9 VDD
VIOH=-500 µA, VDD=VDD Min
T12.0 1235
TABLE 13: RECOMMENDED SYSTEM POWER-UP TIMINGS
Symbol
Parameter
Minimum
Units
TPU-READ1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter
Power-up to Read Operation
100
µs
TPU-WRITE1
Power-up to Write Operation
100
µs
T13.0 1235
TABLE 14: PIN CAPACITANCE (VDD=3.3V, Ta=25 °C, f=1 Mhz, other pins open)
Parameter
Description
Test Condition
Maximum
CI/O1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
I/O Pin Capacitance
VI/O=0V
12 pF
CIN1
Input Capacitance
VIN=0V
12 pF
T14.0 1235



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