SSM3K44MFV datasheet(2/5 Pages) TOSHIBA

2 / 5 page

SSM3K44MFV

2018-05-17

Electrical Characteristics (Ta

= 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±14 V, VDS = 0 V



Drain-source breakdown voltage

V (BR) DSS

ID = 0.1 mA, VGS = 0 V



Drain cut-off current

IDSS

VDS = 30 V, VGS = 0 V



Gate threshold voltage

Vth

VDS = 3 V, ID = 0.1 mA

0.8



1.5

Forward transfer admittance



Yfs

VDS = 3 V, ID = 10 mA



Drain-Source on-resistance

RDS (ON)

ID = 10 mA, VGS = 4 V



2.2

4.0

Ω

ID = 10 mA, VGS = 2.5 V



4.0

7.0

Input capacitance

Ciss

VDS = 3 V, VGS = 0 V, f = 1 MHz



8.5



Reverse transfer capacitance

Crss



5.3



Output capacitance

Coss



9.4



Switching time

Turn-on time

ton

VDD = 5 V, ID = 10 mA,

VGS = 0 to 5 V



Turn-off time

toff



200



Switching Time Test Circuit

(a) Test circuit

(b) VIN

Precaution

Vth can be expressed as the voltage between gate and source when the low operating current value is ID = 100 µA for

this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower

voltage than Vth.

(The relationship can be established as follows: VGS (off) < Vth < VGS (on) )

Please take this into consideration when using the device.

ton

90%

10%

0 V

5 V

10%

90%

toff

VDD

VDS (ON)

VDD = 5 V

Duty ≤ 1%

Input: tr, tf < 5 ns

(Zout = 50 Ω)

Common Source

Ta = 25°C

VDD

Output

Input

5 V

10 µs

SSM3K44MFV 데이터시트(PDF) 2 Page - Toshiba Semiconductor

SSM3K44MFV 데이터시트(HTML) 2 Page - Toshiba Semiconductor

Html Pages

1 2 3 4 5

데이터시트 다운로드

링크 URL