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2SA1413-Z 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SA1413-Z 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon PNP Power Transistor 2SA1413-Z ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= -0.3A; IB= -0.06A -1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= -0.3A; IB= -0.06A -1.2 V VCBO Collector-Base Breakdown Voltage IC= -0.1mA; IB= 0 -600 VCEO Collector-Emitter Breakdown Voltage IC=-10mA;IE=0 -600 VEBO Emitter-Base Breakdown Voltage IE=-0.1mA;IB= 0 -7 ICBO Collector Cutoff Current VCB= -600V; IE= 0 -10 μ A IEBO Emitter Cutoff Current VEB= -7V; IC= 0 -10 μ A hFE-1 DC Current Gain IC= -0.1A; VCE= -5V 30 120 hFE-2 DC Current Gain IC= -0.5A; VCE= -5V 5 |
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