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Ultra-Low V

IXGH 41N60

V

CES

= 600 V

I

C25

= 76 A

V

CE(sat)

= 1.6 V

Symbol

Test Conditions

Maximum Ratings

V

CES

T

600

V

V

CGR

T

600

V

V

GES

Continuous

±20

V

V

GEM

Transient

±30

V

I

C25

T

C

= 25

°C76

A

I

C90

T

C

= 90

°C41

A

I

CM

T

C

= 25

°C, 1 ms

152

A

SSOA

V

I

A

(RBSOA)

Clamped inductive load, L = 100

mH

@ 0.8 V

CES

P

C

T

C

= 25

°C

200

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

M

d

Mounting torque (M3)

1.13/10

Nm/lb.in.

Weight

6g

Maximum lead temperature for soldering

300

°C

1.6 mm (0.062 in.) from case for 10 s

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

BV

CES

I

C

= 250

mA, V

600

V

V

GE(th)

I

C

= 250

mA, V

2.5

5

V

I

CES

V

CE

= 0.8 • V

CES

T

200

mA

V

T

mA

I

GES

V

CE

= 0 V, V

±100

nA

V

CE(sat)

I

C

= I

1.6

V

Features

• International standard package

JEDEC TO-247 AD

process

• Low V

CE(sat)

- for minimum on-state conduction

losses

• High current handling capability

• MOS Gate turn-on

- drive simplicity

Applications

• AC motor speed control

• DC servo and robot drives

• DC choppers

• Solid state relays

• Lighting controls

• Temperature regulators

Advantages

• Easy to mount with 1 screw

(isolated mounting screw hole)

• Low losses, high efficiency

• High power density

97546(1/98)

TO-247 AD

G

C

E

G = Gate,

C = Collector,

E = Emitter,

TAB = Collector

IXYS reserves the right to change limits, test conditions, and dimensions.