| 전자부품 데이터시트 검색엔진 |
|
CMBT3905 데이터시트(PDF) 1 Page - Continental Device India Limited |
|
|
|||||||||||||||||||||||||||||
CMBT3905 데이터시트(HTML) 1 Page - Continental Device India Limited |
|
1 / 3 page ![]() Continental Device India Limited Data Sheet Page 1 of 3 SILICON EPITAXIAL TRANSISTOR P–N–P transistor Marking CMBT3905 = 2Y ABSOLUTE MAXIMUM RATINGS Collector–base voltage (open emitter) –VCBO max. 40 V Collector–emitter voltage (open base) –VCEO max. 40 V Emitter–base voltage (open collector) –VEBO max. 5 V Collector current (d.c.) –I C max. 200 mA Total power dissipation up to Tamb = 60 °C Ptot max. 250 mW D.C. current gain –IC = 10 mA; –VCE = 1 V hFE 50 to 150 Transition frequency at f = 100 MHz –IC = 10 mA; –VCE = 20 V fT min. 200 MHz CMBT3905 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 2 1 SOT-23 Formed SMD Package Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company |
유사한 부품 번호 - CMBT3905 |
|
유사한 설명 - CMBT3905 |
|
|
|
링크 URL |
| ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크 투 데이터시트 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |