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EMIF10-LCD01F2 데이터시트(PDF) 2 Page - STMicroelectronics |
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EMIF10-LCD01F2 데이터시트(HTML) 2 Page - STMicroelectronics |
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2 / 6 page ![]() EMIF10-LCD01F1 2/6 I V IF IRM IR IPP VRM VF VBR VCL Fig. 1: S21(dB) all lines attenuation measurement and Aplac simulation. Fig. 2: Analog crosstalk measurements. Symbol Parameter and test conditions Value Unit Tj Maximum junction temperature 125 °C Top Operating temperature range -40 to + 85 °C Tstg Storage temperature range -55 to +150 °C ABSOLUTE MAXIMUM RATINGS (Tamb =25°C) Symbol Parameters VBR Breakdown voltage IRM Leakage current @ VRM VRM Stand-off voltage VCL Clamping voltage Rd Dynamic impedance IPP Peak pulse current RI/O Series resistance between Input & Output Cline Input capacitance per line ELECTRICAL CHARACTERISTICS (Tamb = 25°C) Symbol Test conditions Min Typ Max Unit VBR IR = 1mA 6 8 10 V IRM VRM =3V 500 nA RI/O 90 100 110 Ω Cline At 0V bias 35 pF Rt/Ft Induced rise and fall time 10-90% at 26 MHz fre- quency signal V = 1.9 V (Rt / Ft input 1 ns, 50 Ω impedance generator) 8 (1) ns (1) guaranteed by design |
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