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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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RFASWAM3489ATF09 데이터시트(PDF) 2 Page - WALSIN TECHNOLOGY CORPORATION |
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RFASWAM3489ATF09 데이터시트(HTML) 2 Page - WALSIN TECHNOLOGY CORPORATION |
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2 / 8 page  Approval Sheet Page 2 of 8 ASC_RFASWAM3489ATF09_V04 Mar. 2018 FEATURES Low Insertion Loss ：0.5dB typ. @ 2.7GHz High Isolation ：25dB typ. @ 2.7GHz Low control voltage ：1.35V to 3V High ESD tolerance of 1kV HBM at all pins ： Miniature footprint ：1.1 x 0.7 x 0.5 mm3 (QFN 6-Pin) Moisture Sensitive Level 3 (MSL3) Description The RFASWAM3489ATF09 is a SOI (Silicon On Insulator) Single-Pole, Double-Throw(SPDT) high power switch that operating at 0.7-2.7 GHz in a 6-Lead QFN Package (1.1x0.7x0.5mm3). The RFASWAM3489ATF09 features very high isolation with very low DC power consumption. The RFASWAM3489ATF09 has ESD protection devices to achieve excellent ESD performances. No DC Blocking capacitors are required for all RF ports unless DC is biased externally. Application Multi-mode 2G/3G, LTE application receive system. Block Diagram and Pin Out (Top View) Pin Names and Descriptions Pin Name Description Pin Name Description 1 VCTL DC control voltage 4 RF2 RF path 2 2 GND Ground 5 RFC RF common port 3 VDD DC power supply 6 RF1 RF path 1 1 2 3 6 5 4 RF1 RF2 ANT VDD VCTL Bias Decoder |
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