Approval Sheet

Page 2 of 8

ASC_RFASWB022ATF09_V01

Jul. 2018

FEATURES



Low Insertion Loss

：0.80dB typ. @ 6.0GHz



High Isolation

：18dB typ. @ 6.0GHz



Low control voltage



Miniature footprint



Moisture Sensitive Level 3 (MSL3)

：



High ESD tolerance of 2kV HBM at all pins

：

Description



The RFASWB022ATF09 is a SOI (Silicon On Insulator) double pole double throw (DPDT) switch. Typical applications are for

multi-mode GSM ,EDGE ,UMTS ,and LTE handset.



The RFASWB022ATF09 is ideally suited for applications where high linearity, low insertion loss, and small size are required.



The RFASWB022ATF09 has ESD protection devices to achieve excellent ESD performances.

Application



Cellular Handset Applications



Cellular Modems and USB Devices



Multi-Mode GSM ,EDGE ,WCDMA ,and LTE Applications

Block Diagram and Pin Out (Top View)

Pin Names and Descriptions

Pin

Name

Description

Pin

Name

Description

1

GND

Ground

6

RF2

RF path 2

2

RF3

RF path 3

7

GND

Ground

3

GND

Ground

8

RF4

RF path 4

4

RF1

RF path 1

9

DC control voltage

5

GND

Ground

10

VDD

DC power supply

1

2

3

4

5

6

7

8

9

10

Decoder

RF4

RF2

RF3

RF1

VDD