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RFASWB643ATF06 데이터시트(PDF) 2 Page - WALSIN TECHNOLOGY CORPORATION |
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RFASWB643ATF06 데이터시트(HTML) 2 Page - WALSIN TECHNOLOGY CORPORATION |
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2 / 8 page ![]() Approval Sheet Page 2 of 8 ASC_RFASWB643ATF06_V05 Oct. 2017 FEATURES Low Insertion Loss :0.45dB typ. @ 2.7GHz High Isolation :27dB typ. @ 2.7GHz Low control voltage :1.8 to 4.2 V : Miniature footprint :2.0 x 2.0 x 0.55 mm3 Moisture Sensitive Level 3 (MSL3) : Description The RFASWB643ATF06 is a SOI (Silicon On Insulator) double pole double throw (DPDT) switch in a low cost miniature QFN (2.0x2.0 x0.55mm3) package. Typical applications are for SV-LTE ,LTE-A and diversity antenna switching. The RFASWB643ATF06 is ideally suited for applications where high power, high linearity, low insertion loss, and small size are required. The RFASWB643ATF06 has ESD protection devices to achieve excellent ESD performances. No DC Blocking capacitors are required for all RF ports unless DC is biased externally. Application 2G/3G/4G multimode cellular handsets (LTE, UMTS, CDMA2000, EDGE, GSM, TDD-LTE, TD-SCDMA) Block Diagram and Pin Out (Top View) Pin Names and Descriptions Pin Name Description Pin Name Description 1 VDD DC power supply 7 RF1 RF path 1 2 N/C No connected 8 N/C No connected 3 VC1 Control voltage 1 9 RF4 RF path 4 4 GND Ground 10 GND Ground 5 RF2 RF path 2 11 path3 RF path 3 6 GND Ground 12 GND Ground |
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