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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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3CD834 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited |
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3CD834 데이터시트(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 isc Silicon PNP Power Transistor 3CD834 DESCRIPTION · Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) · Low Collector-Emitter Saturation Voltage- : VCE(sat)= -1.0V(Max) @IC= -3.0A · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for use in audio frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -3.0 A IB Base Current-Continuous -0.5 A PC Collector Power Dissipation @ TC=25℃ 30 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 4.16 ℃ /W |
유사한 설명 - 3CD834 |
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