| 전자부품 데이터시트 검색엔진 |
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BAV16WS 데이터시트(PDF) 1 Page - First Silicon Co., Ltd |
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BAV16WS 데이터시트(HTML) 1 Page - First Silicon Co., Ltd |
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1 / 2 page ![]() 2016. 1. 28 1/2 SEMICONDUCTOR TECHNICAL DATA BAV16WS Revision No : 0 Ultra high speed switching application Low Forward Voltage Fast Reverse Rocovery Time Small Total Capacitance Case:SOD-323F Plastic Package Weight:Approx. 0.004g Packaging: 3K per 7"reel(8mm tape) 45K inner box, 180K out box Marking: T6(BAV16WS) A8(BAV19WS) Tamb=25 , unless otherwise specified Tamb=25 , unless otherwise specified Unit 2 200 150 -55~150 2 200 Dim Millimeters Characteristic Maximum Peak Reverse Voltage Reverse Voltage Continuous Forward Current Surge Current (1uS) Power Dissipation Junction Temperature Storage Tempearture Range Max Ratings BAV16WS BAV19WS 85 120 80 300 100 200 Symbol VRM VR IF IFSM PD Tj Tstg G >0.25 Features Mechanical Data D 1.70±0.10 E A B 1.30±0.10 0.10±0.02 0.80±0.15 Characteristic Maximum Ratings & Thermal Characteristics 2.65±0.20 V C 0.30±0.05 F Unit Max. Typ. Min. Test Condition Symbol 0.72 VF(1) IF=1mA - 0.60 Electrical Characteristics VF(2) IF=10mA - uA VF(3) IF=150mA - - nS Forward Voltage V Reverse Recovery Time trr IF=10mA - 1.6 pF Total Capcitance CT VR=0, f=1MHZ - 0.9 Reverse Current IR VR=80V - - A B C D E F G Ultra Swtiching Diode SOD-323F |
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