2

EMIT T ER

3

CO LLECT O R

1

B ASE

3

xx

MARKING DIAGRAM

xx= Device Marking

(See Table Below)

2012. 07. 05

1/6

SEMICONDUCTOR

TECHNICAL DATA

BC856U/ 857U/ 858U

Revision No : 0

1

3

2

General Purpose Transistor

PNP Silicon

MAXIMUM RATINGS

Rating

Symbol

BC856U

Unit

Collector–Emitter Voltage

–65

–45

–30

V

Collector–Base Voltage

–80

–50

–30

V

Emitter–Base Voltage

–5.0

–5.0

–5.0

V

Collector Current — Continuous

–100

–100

–100

mAdc

These transistors are designed for general purpose

amplifier applications. They are housed in the SOT–323/

SC–70 which is designed for low power surface mount applications.

Features

RoHS requirements.

We declare that the material of product compliance with

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR– 5 Board, (1)

150

mW

Thermal Resistance, Junction to Ambient

833

°C/W

Junction and Storage Temperature

–55 to +150

°C

DEVICE MARKING

BC856UA=3A , BC856UB=3B, BC857UA=3E, BC857UB=3F

SOT– 323 / SC-70

BC858UA=3J , BC858UB=3K, BC858UC=3L

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

– 65

—

—

V

)

A

m

0

1

–

=

(BR)CEO

– 45

—

—

v

– 30

—

—

Collector–Emitter Breakdown Voltage

– 80

—

—

µA, V

EB

V

)

0

=

(BR)CES

– 50

—

—

v

– 30

—

—

Collector–Base Breakdown Voltage

– 80

—

—

µA

V

)

(BR)CBO

– 50

—

—

v

– 30

—

—

Emitter–Base Breakdown Voltage

– 5.0

—

—

µA

V

)

(BR)EBO

– 5.0

—

—

v

– 5.0

—

—

—

—

– 15

nA

0

.

4

–

—

—

)

C

°

0

5

1

=

µA

1.FR–5=1.0 x 0.75 x 0.062in

BC856U Series

BC857U Series

BC858U Series

BC856U Series

BC857U Series

BC858U Series

BC856U Series

BC857U Series

BC858U Series

BC856U Series

BC857U Series

BC858U Series

BC858U

BC857U