PARAMETER

SYMBOL

ES1AF

ES1BF

ES1DF

ES1GF

ES1JF

UNITS

Maximum repetitive peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Average Rectified Output Current

0.375″(9.5mm) lead length

Peak forward surge current, 8.3 mS single half sine-wave

superimposed on rated load

Typical junction capacitance (Note 2)

Typical thermal resistance

Operating junction temperature range

Storage temperature range

50

100

200

400

600

V

35

70

140

280

420

V

50

100

200

400

600

V

1.0

A

30

A

V

0.95

1.3

1.7

10

pF

Notes:

1. Reverse Recovery Time test condition: IF=0.5A, IR=1.0A, IRR=0.25A.

2. Measured at 1 MHz and applied reverse voltage of 4.0 VDC.

℃/W

-55 to +150

℃

-55 to +150

℃

Maximum reverse recovery time (Note 1)

nS

35

Maximum DC reverse current

at rated DC blocking voltage

μA

5.0

50

θ

SURFACE MOUNT SUPERFAST RECTIFIER

Reverse Voltage 50 to 600 Volts Forward Current 1.0 Amperes

Features

Mechanical Data

Maximum Ratings and Electrical Characteristics

Ratings at 25℃ ambient temperature unless otherwise specified.

●

Glass passivated junction

●

Low forward voltage drop

●

High current capability

●

Low reverse leakage

●

High surge current capability

●

High reliablity

●

Plastic package has Underwriters

Laboratory Flammability Classification 94V-0

●

Case: SMA-FL molded plastic body

●

Terminals: Plated axial leads,

solderable per MIL-STD-750, method 2026

●

Polarity: Color band denotes cathode end

●

Mounting Position: Any

●

Weight: 0.0027 grams (approximate)

80

SEMICONDUCTOR

TECHNICAL DATA

ES1AF THRU ES1JF

2018. 04. 12

1/2

Revision No : 0