BUJ103AD

Silicon diffused power transistor

3. Ordering information

4. Limiting values

Table 2.

Ordering information

Type number

Package

Name

Description

Version

BUJ103AD

D-PAK

plastic single-ended surface mounted package; 3 leads (one lead cropped) SOT428

Table 3.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

peak collector-emitter voltage

-

700

V

collector-base voltage

open emitter

-

700

V

collector-emitter voltage

open base

-

400

V

collector current (DC)

-

4

A

peak collector current

-

8

A

base current (DC)

-

2

A

peak base current

-

4

A

total power dissipation

-80

W

storage temperature

65

+150

C

junction temperature

-

150

C

Fig 1. Normalized total power dissipation as a function of mounting base temperature

0

160

120

40

80

001aab993

40

80

120

(%)

0

P



P

tot

P

tot 25

C



-------------------------

100%



=

WeEn Semiconductors

BUJ103AD

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Product data sheet

Rev.3 18 October 2016

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