BYC10-600CT datasheet(3/8 Pages) WEEN

3 / 8 page

WeEn Semiconductors

Product specification

Rectifier diode

BYC10-600CT

ultrafast, low switching loss

ELECTRICAL CHARACTERISTICS

j = 25 ˚C, per diode unless otherwise stated

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Forward voltage

F = 5 A; Tj = 150˚C

1.4

1.75

F = 10 A; Tj = 150˚C

1.75

2.2

F = 5 A;

2.0

2.9

Reverse current

R = 600 V

100

μA

R = 500 V; Tj = 100 ˚C

0.9

3.0

Reverse recovery time

F = 1 A; VR = 30 V; dIF/dt = 50 A/

μs

Reverse recovery time

F = 5 A; VR = 400 V;

F/dt = 500 A/

μs

Reverse recovery time

F = 5 A; VR = 400 V;

F/dt = 500 A/

μs; T

j = 100˚C

rrm

Peak reverse recovery current

F = 5 A; VR = 400 V;

0.7

F/dt = 50 A/

μs; T

j = 125˚C

rrm

Peak reverse recovery current

F = 5 A; VR = 400 V;

F/dt = 500 A/

μs; T

j = 125˚C

Forward recovery voltage

F = 10 A; dIF/dt = 100 A/

μs-

Fig.1. Typical application, output rectifier in boost

converter power factor correction circuit. Continuous

conduction mode, where the transistor turns on whilst

forward current is still flowing in the diode.

Fig.2. Typical application, freewheeling diode in half

bridge converter. Continuous conduction mode, where

each transistor turns on whilst forward current is still

flowing in the other bridge leg diode.

Vin

Vo = 400 V d.c.

500 V MOSFET

150 uH

OUTPUT DIODE

typ

Vin

Vin = 400 V d.c.

inductive load

August 2018

Rev 1.

300

BYC10-600CT 데이터시트(PDF) 3 Page - WeEn Semiconductors

BYC10-600CT 데이터시트(HTML) 3 Page - WeEn Semiconductors

Html Pages

1 2 3 4 5 6 7 8

데이터시트 다운로드

링크 URL