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TMS29F010-90CSFML 데이터시트(PDF) 13 Page - Texas Instruments

부품명 TMS29F010-90CSFML
상세설명  131072 BY 8-BIT FLASH MEMORY
PDF  36 Pages
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TMS29F010-90CSFML 데이터시트(HTML) 13 Page - Texas Instruments

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TMS29F010
131072 BY 8-BIT
FLASH MEMORY
SMJS840A – NOVEMBER 1997 – REVISED JUNE 1998
13
POST OFFICE BOX 1443
• HOUSTON, TEXAS 77251–1443
electrical dc characteristics over recommended ranges of supply voltage and ambient
temperature
PARAMETER
TEST CONDITIONS
MIN
MAX
UNIT
VIH
High level dc input voltage
TTL
2
VCC + 0.5
V
VIH
High-level dc input voltage
CMOS
0.7*VCC
VCC + 0.5
V
VIL
Low level dc input voltage
TTL
–0.5
0.8
V
VIL
Low-level dc input voltage
CMOS
–0.5
0.8
V
VID
Algorithm-selection and sector-protect/unprotect
input voltage
VCC = 5.0 V
11.5
12.5
V
VLKO
Low VCC lock-out voltage (see Note 5)
3.2
V
TTL
VCC =VCC MIN†
IOH = – 2.5 mA
2.4
VOH
High-level dc output voltage
CMOS
VCC =VCC MIN
IOH = – 100 µA
VCC – 0.4
V
CMOS
VCC =VCC MIN
IOH = – 2.5 mA
0.85*VCC
VOL
Low-level dc output voltage
TTL
VCC =VCC MIN
IOL = 5.8 mA
0.45
V
VOL
g
(see Note 6)
CMOS
VCC =VCC MIN
IOL = 5.8 mA
0.45
V
II
Input current (leakage)
VCC =VCC MAX
VI =VSS to VCC
±1
µA
IO
Output current (leakage)
VCC = VCC MAX
VO = VSS to VCC
±1
µA
IID
High-voltage load current
VCC = VCC MAX
A9 = 12.5 V
50
µA
ICC1
VCC active current (see Note 7)
E = VIL,G = VIH
30
mA
ICC2
VCC active current (see Note 8)
E = VIL,G = VIH
50
mA
ICC3
VCC supply current (standby)
TTL-input level
VCC = VCC MAX
E = VIH
1
mA
ICC3
VCC supply current (standby)
CMOS input level
VCC = VCC MAX
E = VCC ± 0.5 V
100
µA
† See the recommended operating conditions table
NOTES:
5. Typical value at nominal condition (TA = 25°C)
6. 12-mA IOL also available
7. ICC current in the read mode, switching at 6 MHz, IOUT = 0 mA
8. ICC current while erase or program operation is in progress
capacitance over recommended ranges of supply voltage and ambient temperature
PARAMETER
TEST CONDITIONS
MIN
MAX
UNIT
Ci1
Input capacitance (All inputs except A9, E, G)
VI = 0 V, f = 1 MHz
7.5
pF
Ci2
Input capacitance (A9, E, G)
VI = 0 V, f = 1 MHz
9
pF
Co
Output capacitance
VO = 0 V, f = 1 MHz
12
pF



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