FDR140F datasheet(1/3 Pages) FS

부품명	FDR140F

상세설명	Schottky Barrier Rectifiers Reverse Voltage 20 to 200V Forward Current 1.0A

PDF	3 Pages

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제조업체	FS [First Silicon Co., Ltd]

홈페이지	http://www.firstsilicon.co.kr/

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1 / 3 page

SEMICONDUCTOR

TECHNICAL DATA

FDR120F~1200F

2014. 05. 28

1/3

Revision No : 0

FE TURES

* Plastic package has Under writers Laboratory

Flammability Classification 94V-0

* Low power loss,high efficiency

* For use in low voltage high frequency inverters,

free wheeling,and polarity

* Guardringfor over voltage protection

* High temperature soldering guaranteed:

260℃/10 seconds at terminals

Mechanical Data

Case: SOD-323F

molded plastic over sky die

Terminals: Tin Plated, solderable per

MIL-STD-750, Method 2026

Polarity: Color band denotes cathode end

Mounting Position: Any

We declare that the material of product is

Weight:

0.011 g

Haloggenfree (green epoxy compound)

Handling precautin:None

1.Electrical Characteristic

Maximum & Thermal Characteristics Ratings at 25℃ ambient temperature unless other wise specified.

Parameter Symbol

symbol

FDR120F

Unit

device marking code

12

13

14

15

16

18

110

115

120

Maximum repetitive peak reverse

voltage

VRRM

20

30

40

50

60

80

100

150

200

V

Maximum RMS voltage

VRMS

14

21

28

35

42

56

70

105

140

V

Maximum DC blocking voltage

VDC

20

30

40

50

60

80

100

150

200

V

Maximum averageforward rectfied

current atTc = 75℃

IF(AV)

A

Peak forward surge current 8.3ms

single haf sine-wave superimposed

on rated load (JEDEC Method)

IFSM

A

Typical thermal resistance (Note 1)

RθJA

RθJL

°C/W

Operating junction temperature

range

TJ

°C

storage temperature range

TSTG

°C

Electrical Characteristics Ratings at 25℃ ambient temperature unless other wise specified.

Parameter Symbol

symbol

Unit

Maximum instantaneousforward

voltage at(IF = 0.7 A, TJ = 25℃)

(IF = 1.0 A, TJ

VF

0.9

0.92

V

Maximum DC reverse current at

rated DC blocking voltage TA=25℃

TJ =125℃

IR

mA

Typical junction capacitance at

4.0V, 1MHz

CJ

PF

NOTES:

1. 8.0mm2 (.013mm thick) land areas

0.48

0.55

Schottky Barrier Rectifiers

Reverse Voltage 20 to 200V Forward Current 1.0A

0.02

10

160

0.7

1.0

22

220

50

–55 to +150

–65 to +150

0.85

SOD-323F

FDR130F FDR140F FDR150F FDR160F

FDR180F FDR1100F

FDR1200F

= 25℃)

FDR120F FDR130F FDR140F

FDR150F

FDR160F

FDR180F

FDR1100F

FDR1150F

FDR1150F FDR1200F

유사한 부품 번호 - FDR140F

제조업체	부품명	데이터시트	상세설명
First Silicon Co., Ltd	FDR140	277Kb / 4P	Surface Mount Schottky Power Rectifier
	FDR140T1G	277Kb / 4P	Surface Mount Schottky Power Rectifier
	FDR140T3G	277Kb / 4P	Surface Mount Schottky Power Rectifier

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유사한 설명 - FDR140F

제조업체	부품명	데이터시트	상세설명
Leshan Radio Company	1N5817	262Kb / 7P	Schottky Barrier Rectifiers Reverse Voltage 20 to 40V Forward Current 1.0A
	LMBR1200FT1G	172Kb / 7P	Schottky Barrier Rectifiers Reverse Voltage 20 to 200V Forward Current 1.0A
	LMBR2200FT1G	181Kb / 7P	Schottky Barrier Rectifiers Reverse Voltage 20 to 200V Forward Current 2.0A
	LMBR3200FT1G	166Kb / 7P	Schottky Barrier Rectifiers Reverse Voltage 20 to 200V Forward Current 3.0A
	SB120	375Kb / 7P	Schottky Barrier Rectifiers Reverse Voltage 20 to 100V Forward Current 1.0A
	LMBR120ET1G	495Kb / 11P	Schottky Barrier Rectifiers Reverse Voltage 20 to 200V Forward Current 1.0A
Weitron Technology	B120E	1Mb / 5P	Reverse Voltage 20 to 200V Forward Current 1.0A
Weitron Technology	B120F	1Mb / 6P	Reverse Voltage 20 to 200V Forward Current 1.0A
AiT Semiconductor Inc.	MBR120E	484Kb / 5P	SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE 20V TO 200V FORWARD CURRENT 1.0A REV1.1
AiT Semiconductor Inc.	MBR120F	435Kb / 5P	SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE 20 TO 200V FORWARD CURRENT 1.0A REV2.0

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FDR140F 데이터시트(PDF) 1 Page - First Silicon Co., Ltd

FDR140F 데이터시트(HTML) 1 Page - First Silicon Co., Ltd

유사한 부품 번호 - FDR140F

유사한 설명 - FDR140F

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