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FDR301 데이터시트(PDF) 1 Page - First Silicon Co., Ltd |
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FDR301 데이터시트(HTML) 1 Page - First Silicon Co., Ltd |
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1 / 3 page ![]() SEMICONDUCTOR TECHNICAL DATA FDR301 2011. 10. 17 1/3 Revision No : 0 MAXIMUM RATINGS(TJ=125°C unless otherwise noted) Rating symbol value unit Reverse Voltage V R 30 Volts Forward Power Dissipation P F W m 0 0 2 0 8 2 C ° 5 2 = A T @ C ° / W m 0 . 2 8 . 2 C ° 5 2 e v o b a e t a r e D Operating Junction T J °C 5 2 1 + o t 5 5 – e g n a R e r u t a r e p m e T Storage Temperature Range T stg –55 to +150 °C DEVICE MARKING FDR301 = 4T ELECTRICAL CHARACTERISTICS(TA=25 °C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Reverse Breakdown Voltage(IR=10 µA) V (BR)R 30 — — Volts Total Capacitance(VR=15V,f=1.0MHz,)Figure1 C T — 0.9 1.5 pF Reverse Leakage(VR=25V)Figure3 I R — 13 200 nAdc Forward Voltage(IF=1.0mAdc)Figure4 V F — 0.38 0.45 Vdc Forward Voltage(IF=10mAdc)Figure4 V F — 0.52 0.6 Vdc Silicon Hot–Carrier Diodes Schottky Barrier Diodes 3 CATHODE 1 ANODE These devices are designed primarily for high–efficiency UHF and VHF detector applications.They are readily adaptable to many other fast switching RF and digital applications.They are supplied in an inexpensive plastic package for low–cost, high–volume consumer and industrial/commercial requirements.They are also available in a Surface Mount package. • EXtremely Low Minority Carrier Lifetime –15ps(Typ) • Very Low Capacitance –1.5pF(Max)@VR=15V • Low Reverse Leakage –I R =13 nAdc(Typ) • We declare that the material of product compliance with RoHS requirements. SOT –23 1 3 2 |
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