PIN CONFIGURATION

TFBGA

A19

A3

1

1

A

9

A

0

1

A

A0

A14

A8

NC

WE#

DQ9

DQ14

DQ15

A18

Vss

CE2

A13

DQ8

Vcc

Vcc

DQ7

A15

Vss

CE#

LB#

DQ6

DQ2

DQ0

A2

OE#

A1

5

A

6

A

A4

UB#

123

4

5

6

H

G

C

D

E

F

A

B

A12

NC

A17

A7

A16

DQ10

DQ11

DQ12

DQ13

DQ5

DQ4

DQ3

DQ1

ABSOLUTE MAXIMUN RATINGS*

PARAMETER SYMBOL

RATING

UNIT

-0.5 to 4.6

V

Operating Temperature

-40 to 85(I grade)

℃

Storage Temperature

-65 to 150

℃

Power Dissipation

W

DC Output Current

mA

Soldering Temperature (under 10 sec)

℃

*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress

rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this

specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.

512K X 8 BI T LOW POWER CMOS SRAM

January 2007

1024K X 16 BIT LOW POWER CMOS SRAM

FEBRUARY 2009

FEBRUARY/2009, V 1.a

Alliance Memory Inc.

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AS6C1616