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WNB111C5APTS 데이터시트(PDF) 3 Page - WeEn Semiconductors |
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WNB111C5APTS 데이터시트(HTML) 3 Page - WeEn Semiconductors |
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3 / 7 page ![]() WNB111C5APTS 6. Characteristics Notes: (1) * mean that parameter are 100% test at T amb = 25°C (2) ** means that the guaranteed ratings and parameter limits will depend on the assembled structure. When correctly assembled with suitable die bonding and wire bonding, the device will have ratings and characteristics guaranteed in this data sheet, similar to the assembled devices such as BYC15-600P. Table 4. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics IF = 5A; Tj = 25 °C - - 2.3 V IF = 15 A; Tj = 25 °C - 2.7 3.2 V VF forward voltage IF = 15 A; Tj = 150 °C - 1.4 2 V VR = 600 V; Tj = 25 °C - 1 10 µA IR reverse current VR = 600 V; Tj = 150 °C - - 1 mA Dynamic characteristics IF = 1 A; VR = 30 V; dIF/dt = 200 A/ µs; Tj = 25 °C - 13 18 ns IF = 15 A; VR = 400 V; dIF/dt = 500 A/ µs; Tj = 25 °C - 22 - ns trr reverse recovery time IF = 15 A; VR = 200 V; dIF/dt = 200A/ µs; Tj = 25 °C - 28 - ns ** ** WeEn Semiconductors WNB111C5APTS All information provided in this document is subject to legal disclaimers. Product data sheet 29 October 2017 3 / 7 © WeEn Semiconductors Co., Ltd. 2017. All rights reserved |
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