FDR751E datasheet(1/3 Pages) FS

부품명	FDR751E

상세설명	SCHOTTKY BARRIER DIODE

PDF	3 Pages

Scroll/Zoom	100%

제조업체	FS [First Silicon Co., Ltd]

홈페이지	http://www.firstsilicon.co.kr/

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1 / 3 page

SCHOTTKY BARRIER DIODE

MAXIMUM RATINGS (TA = 25 C)

Parameter

Symbol

Limits

Unit

V

e

g

a

t

l

o

v

e

s

r

e

v

e

r

k

a

e

P

RM

40

V

e

g

a

t

l

o

v

e

s

r

e

v

e

r

C

D

R

30

V

I

t

n

e

r

u

c

g

n

i

y

f

i

t

c

e

r

n

a

e

M

O

30

mA

Peak forward surge current

IFSM

200

mA

T

e

r

u

t

a

r

e

p

m

e

t

n

o

i

t

c

n

u

J

j

125

C

T

e

r

u

t

a

r

e

p

m

e

t

e

g

a

r

o

t

S

stg

-40~+125

C

ELECTRICAL CHARACTERISTICS(TA= 25 C)

Parameter

Symbol

Min.

Typ

Max.

Unit

Conditions

V

e

g

a

t

l

o

v

d

r

a

w

r

o

F

-

0.37

V

I

F=1mA

I

t

n

e

r

u

c

e

s

r

e

v

e

R

-

0.5

µA

VR=30V

Capacitance between terminals

C

T

-

2.0

-

pF

V

R=1V,f=1MHz

DEVICE MARKING

FDR751T1G= 5

Features

(1)Small surface mounting type SC-79/SOD-523

(2)Low reverse current and low forward voltage.

(3)High reliability

Construction

Silicon epitaxial planar

1

CATHODE

2

ANODE

Ordering Information

Device

Marking

Shipping

FDR751ET1G

5

3000/Tape&Reel

FDR751ET3G

5

10000/Tape&Reel

We declare that the material of product

compliance with RoHS requirements.

SEMICONDUCTOR

TECHNICAL DATA

FDR751E

2009. 6. 25

1/3

Revision No : 0

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