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FDR521LP 데이터시트(PDF) 1 Page - First Silicon Co., Ltd |
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FDR521LP 데이터시트(HTML) 1 Page - First Silicon Co., Ltd |
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1 / 3 page ![]() SEMICONDUCTOR TECHNICAL DATA FDR521LP 2014. 02. 13 1/3 Revision No : 0 Schottky Barrier Diode Absolute Maximum Ratings (TA=25℃ unless otherwise specified) Symbol Parameter Value Unit VR Reverse Voltage (DC) 30 V IO Average Rectified Forward Current 100 mA IFSM Forward Current SurgePeak (60Hz/1cyc) 500 mA JunctionTemperature 150 Storage Temperature -40-+150 Electrical Characteristics (TA=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Forward Voltage VF IF = 10mA - - 0.35 V Reverse Leakage Current IR VR = 10V 10 uA Features Ultra Small Power Mold Type Low IR High Reliability Low Current Rectification Mechanical Data Case Material: Molded Plastic,"Green" Molding Compound. UL FlammabilityClassificationRating 94V-0 Moisture Sensitivity:Level 1 per J-STD-020 Terminal Connections:Cathode Dot Terminals: Finish -NiPdAu annealed over Copperleadframe Solderable per MIL-STD-202, Method 208 Weight: 0.001grams (approximate) Applications Mobile Handsets MP3 Players Digital Camera and Camcorders NotebookPCs & PDAs GPS CASE: DFN1006-2 Thermal Characteristics Symbol Parameter Value Unit RθJA Thermal Resistance,Junctionto AmbientAir 400 °C/W TJ °C TSTG °C |
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