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E1B 데이터시트(PDF) 1 Page - First Silicon Co., Ltd |
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E1B 데이터시트(HTML) 1 Page - First Silicon Co., Ltd |
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1 / 2 page ![]() 2012 08 30 1/2 Revision No : 0 SEMICONDUCTOR TECHNICAL DATA E1A ~ E1J Super Fast Recovery Rectifier Diode ■ Features ■ Outline Dimensions ● Io 1.0A ● VRRM 50V~600V ● Glass passivated chip ● High surge forward current capability ■ Applications ● For general power supply single-phase rectifier ■ Limiting Values(Absolute Maximum Rating) Item Symbol Unit Conditions E1 A B D F G J Repetitive Peak Reverse Voltage VRRM V 50 100 200 300 400 600 Average Rectified Output Current IO A 60Hz One-way half-wave, R-load,Ta=75℃ 1.0 Surge(Non-repeti ive) Forward Current IFSM A 60HZ sine wave, 1 cycle, Tj=25℃ 30 Storage Temperature Tstg ℃ -55 ~+150 Junction Temperature Tj ℃ -55 ~+150 ■ Electrical Characteristics(Ta=25℃ Unless otherwise specified) Item Symbol Unit Test Condition E1 A B D F G J Peak Forward Voltage VFM V IFM=1.0A 1.0 1.3 1.7 Maximum reverse recovery ime t rr ns IF=0.5A,IR=1.0A,IRR 5 3 A 5 2 . 0 = Peak Reverse Current IRRM μA VRM=VRRM , Ta=25℃ 5 Thermal Resistance RθJ-L ℃/W Between junction and lead 20 Dimensions in inches and (millimeters) SOD-123FL .047(1.20) .039(1.00) .010(0.25) .004(0.10) .043(1.10) .035(0.90) .075(1.90) .063(1.60) .002(0.05) .001(0.02) |
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