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OB2269AP 데이터시트(PDF) 9 Page - Lite-On Technology Corporation |
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OB2269AP 데이터시트(HTML) 9 Page - Lite-On Technology Corporation |
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9 / 12 page ![]() ©On-Bright Electronics Confidential A Liteon Semiconductor Company - 9 - V2.1 OB2268 OB2269 Current Mode PWM Controller OB2268/9 Gate is connected to an external MOSFET gate for power switch control. Too weak the gate drive strength results in higher conduction and switch loss of MOSFET while too strong gate drive output compromises the EMI. A good tradeoff is achieved through the built-in totem pole gate design with right output strength and dead time control. The low idle loss and good EMI system design is easier to achieve with this dedicated control scheme. An internal 18V clamp is added for MOSFET gate protection at higher than expected VDD input. • Protection Controls Good system reliability is achieved with OB2268/9’s rich protection features including Cycle-by-Cycle current limiting (OCP), Over Load Protection (OLP), over temperature protection (OTP), on-chip VDD over voltage protection (OVP, optional) and under voltage lockout.(UVLO). The OCP threshold is input line voltage adjusted to compensate the increased output current limit at higher voltage caused by inherent Over-Current sensing and control delay. A constant output power limit is achieved with recommended reference design on OB2268/9. At overload condition when FB input voltage exceeds power limit threshold value for more than 80mS, control circuit reacts to shut down the output power MOSFET. Device restarts when VDD voltage drops below UVLO limit. Similarly, control circuit shuts down the power MOSFET when an Over Temperature condition is detected. OB2268/9 resumes the operation when temperature drops below the hysteresis value. VDD is supplied with transformer auxiliary winding output. It is clamped when VDD is higher than 30V. The power MOSFET is shut down when VDD drops below UVLO limit and device enters power on start-up sequence thereafter. |
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